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08:00 - 08:15
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Paper No. 2014-FRI-S1003-O001
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| Chih-Hao Wang
Award Candidate
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GaN-Based Enhancement-Mode High Electron Mobility Transistors for Power Devices
Chih-Hao Wang,
This paper demonstrate an enhancement-mode (E-mode) GaN based high electron mobility transistors (HEMT) with a P-type layer on the Si substrate. Small devices and power devices are fabricated in this research. The threshold voltage (Vth) is 1.5 V. The saturation drain can attain 6.42 A.
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08:15 - 08:30
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Paper No. 2014-FRI-S1003-O002
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| Yuan Chang Jhang
Award Candidate
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InGaN Optoelectronic Devices with Nanoporous GaN Distributed Bragg Reflector Structure
YuanChang Jhang,
InGaN optoelectronic structures with bottom nanoporous-GaN/u-GaN distributed Bragg reflectors (DBR) were fabricated. Mesa regions with bottom DBR structures were treated by pulse 355nm laser scribing and electrochemical etching processes. Si-heavy doped GaN:Si layers had been transformed into low refractive index nanoporous GaN structure for the DBR structures. Eight pairs stacked refractive index difference consisted of 1/4λ nanoporous GaN layer and 3/4λ u-GaN layer for the bottom DBR structure. The central wavelength of DBR structure was located 410nm with a 50nm stop-band width and about 60% reflectance. Line-scan photoluminescence spectra of treated mesa region were measured to analyze the optical properties that the mesa surrounded with the DBR structure. High efficiency electroluminescence properties were observed on the treated region with bottom DBR structure that potential for the resonant-cavity optoelectronic device application.
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08:30 - 08:45
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Paper No. 2014-FRI-S1003-O005
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| Wei-Chen Shen
Award Candidate
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Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors
Wei-Chen Shen,Yung-Chi Yao,Pin-Guang Chen,Zu-Po Yang,Yung-An Hsieh,Ming-Han Liao,Min-Hung Lee,Mei-Tan Wang,Jung-Min Hwang,Ya-Ju Lee,
We report a novel monolithically integrated GaN-based light-emitting diode (LED) with metal-oxide-semiconductor field-effect transistor (MOSFET).The MOSFET is fabricated on the n-type GaN layer of the LED after dry etching, and connected to the LED. The monolithically exhibits good characteristics in the modulation of gate voltage and capability of driving injected current.
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08:45 - 09:00
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Paper No. 2014-FRI-S1003-O006
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| Chao-Wei Wu
Award Candidate
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Thermoelectric Characteristic of the Rough InN/GaN Core-Shell Nanowires
Chao-Wei Wu,Yuh-Renn Wu,
An analysis to model the thermoelectric(TE) effects
of the rough InN/GaN core-shell nanowires(NWs) with wire di-
ameter ranging from 25nm to 100nm is proposed. The optimized
condition of the proposed rough InN/GaN core-shell TE NWs is
studied and the highest ZT obtained is 0.8598 at 300K and 1.713 at 1000K.
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09:00 - 09:15
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Paper No. 2014-FRI-S1003-O008
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| jiangnan dai
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Investigation of the nonpolar a-plane MgZnO films grown on a-GaN/r-sapphire templates by pulsed laser deposition
jiangnan dai,Jun Zhang,Wu Tian,Feng Wu,Yanyan Fang,Zhihao Wu,Changqing Chen,
Nonpolar a-plane MgZnO films were grown on different a-GaN/r-sapphire templates by pulsed laser deposition (PLD). High-quality a-plane MgZnO epitaxial films were deposited on the optimized 1000 ºC a-GaN/r-sapphire template. Temperature-dependent PL measurements of a-plane MgZnO films revealed an S-type temperature dependence of the excitonic recombination energy, suggesting the localization of excitons takes place.
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09:15 - 09:30
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Paper No. 2014-FRI-S1003-O009
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| Cheng Yi
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Research on Structural Properties of Cu doped Ga2O3 Films Prepared by Electron Beam Evaporation
Cheng Yi,
Cu doped Ga2O3 thin films are deposited on sapphire substrates using electron beam evaporation method with subsequent annealing at 1000 ℃ for 1 hour. The influence of the Cu dopant on the crystal structures and surface morphologies of Ga2O3 films are investigated by X-ray diffraction and scanning electron microscopy.
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