Recent predictions of room temperature ferromagnetism in transition metal doped wide bandgap semiconductors such as GaN have spawned a great interest for their use in the field of semiconductor-based spintronics. Spintronic devices differ from traditional electronics in that they are based on the electron spin instead of its charge. Both improved processing and efficiency within existing devices, as well as novel functionalities such as reconfigurable logic, nonvolatile chip-based memory, and a solid state quantum computing may be possible within magnetic semiconductor systems. If these devices can be implemented at room temperature, they will advance the state of the art in spintronics and create a new technological revolution similar to the invention of the transistor.

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We demonstrate a room temperature optically pumped GaSb-based mid-Infrared photonic crystal surface emitting laser (PCSEL). We use type-I InGaAsSb quantum wells as active region. The square lattice photonic crystal on the surface provides the optical feedback for laser operation and light coupling for surface emission. The pulsed operated PCSEL emits at 2.3m wavelength with threshold power density around 1KW/cm2 and line width of 0.3nm. The laser was operated up to 320K. As a result of the photonic crystal, a very small wavelength shift of 0.2 nm/K was obtained as the temperature changes.

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We propose a gold bowtie aperture with projected gold pad underneath that possesses two plasmonic resonance modes. High sensitivity for optical sensing and strong optical force for trapping are obtained from these two modes. Via excitation polarization switching, this design has the versatility to serve as highly efficient optical sensors and tweezers.

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The resonance characteristics of light interaction with plasmonic nanoantennas (NAs) have been investigated when the transverse (non-polarization) length of NAs is changed from paired-rods to paired-strips. Both far-field spectra and near-field distribution are compared when LSPR happens. The results show when transverse lengths of NAs decreases, resonance wavelength will have red shift. Smaller full width at half maximum (FWHM) and stronger localized field enhancement is achieved.

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A high-contrast grating (HCG) reflector is implemented in a standard bulk CMOS configuration to facilitate the development of on-chip vertical-cavity in-planeemitting laser and optical phased array. Both simulation and experimental results reveal that as-realized HCG reflector is capable of providing >95% reflectivity at 1310 nm wavelength band for s-polarization without the need of any post process.

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