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17:00 - 17:45
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Paper No. 2014-Thu-P0302-P001
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| JerShien Chen
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Output Waveform Stability Analysis in Two-Section DFB Self-Pulsating Lasers
JerShien Chen,
Relationship among output waveforms and maintaining stability for self-pulsating two-section distributed feedback laser is analyzed under different laser structure factors: cavity length, line-width enhancement factor, and facet phase shift. The oscillation stability analysis criteria are also discussed different to the existed papers.
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17:00 - 17:45
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Paper No. 2014-Thu-P0302-P002
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| Yonan Su
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Stabilize Control of modulation instability in photorefractive crystal
Yonan Su,
By experimental measurement and theoretical analysis, we demonstrate the control of modulation instability in nonlinear media. Appearance and suppression of modulation are observed in a series of spontaneous optical patterns as the intensity of input coherent beam increases, with different bias voltages and different background field intensity.
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17:00 - 17:45
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Paper No. 2014-Thu-P0302-P003
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| Chen Xing You
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Stabilize Townes solitons by a tilted dipole-dipole interaction
Chen Xing You,
By tilting the angle of dipole-dipole interaction with respect to the confined Bose-Einstein condensate trapped in a two-dimensional (2D) potential, we reveal the possibility to stabilize a 2D soliton by suppressing the Townes soliton instability. Due to the long-ranged and anisotropic interaction, it is the non-definite positive spectrum, which compensates the instability induced by the short-ranged nonlinearity.
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17:00 - 17:45
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Paper No. 2014-Thu-P0302-P004
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| MING-XUAN LIU
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Implementation of semiconductor laser driver with high current stability
MING-XUAN LIU,
The design of a stable constant current source by using MOSFET as the current control device for driving the semiconductor laser diode is described. Adopting high precision and low temperature shift of circuit element, the short term stability of driver current source can reach 6.87×10^-6 .This high stability current driver for semiconductor laser diode satisfies interferometry application.
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17:00 - 17:45
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Paper No. 2014-Thu-P0302-P005
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| Tsung-Han Tsai
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Growth and Characterization of Amorphous Silicon Quantum Dots in Si-rich Silicon Oxide
Tsung-Han Tsai,Yen-Pu Chen,Ming-Yi Lin,Yao-Hong You,Wing-Kit Choi,Hoang-Yan Lin,
Silicon quantum dots (Si-QDs) are attractive for many promising applications in silicon photonics. This paper presents a controlled synthesis of amorphous Si QDs (a-Si QDs) embedded in Si-rich SiOx (SRO) film grown by PECVD system and post-annealing. The formation and quantum confinement effect (QCE) of a-Si QDs embedded in SRO film grown with relatively low annealing temperature (300℃) are demonstrated.
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