Student Paper Award Announced!!

Session Index

Quantum Electronics

Oral session 3 - Semiconductor Photonics
Friday, Dec. 5, 2014  08:00-09:30
Chair: Sheng-Kwang Hwang,Hsu-Cheng Hsu
Room: B20
08:00 - 08:15 Paper No.  2014-FRI-S0303-O001
Teny-Yi Shoeh Type-II GaSb/GaAs-quantum-dot-based circular-phonotic-crystal nanocavity laser with long photon lifetime and high Purcell factor
Teny-Yi Shoeh,Kung-Shu Hsu,Chih-Chi Chang,W. H. Lin,C. T. Lin,S. Y. Lin,M. H. Shih,

In this study, type-II GaSb/GaAs quantim dot circular phonotic crystal laser was demonstrated. Lasing action was achieved with wavelength around 961 nm at 150 K temperature. Not only long photon lifetimes were measured by time-result photonluminescence technique but also high Purcell factor were observed when QD emission coupled into high-Q photonic crystal cavity mode.

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08:15 - 08:30 Paper No.  2014-FRI-S0303-O002
Cheng-Jhih Luo Dual wavelength lasing of a 10 GHz active mode-locked semiconductor optical amplifier fiber laser by EO phase modulation
Kuang-ting Yen,Cheng-Jhih Luo,Yinchieh Lai,

An active mode-locked SOA fiber laser with the repetition rate of 10 GHz is demonstrated by EO phase modulation. The laser can be operated under the single wavelength state and the dual wavelength state with the adjustment of pump current and light polarization. Its application for measuring fiber dispersion is also demonstrated.

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08:30 - 08:45 Paper No.  2014-FRI-S0303-O005
Yen-Mo Wu Single ZnO nanowire lasing at ultraviolet wavelength enhanced by surface plasmon resonance
Yen-Mo Wu,Chun-Ting Yang,Yu-Hsun Chou,Bo-Tsun Chou,Chih-Kai Chiang,Tzy-Rong Lin,Sheng-Di Lin,Tien-Chang Lu,

To realize the destination of optical integrated circuits, miniaturizing optical device which can generate high intensity coherent sources appeals to many people to research. In this study, we report surface plasmonic lasers comprised of 5nm silica gap layer between ZnO nanowire and silver film. The lasing wavelength is located at the region of interband absorption of silver. In this region, the refractive index of silver varies sharply, as a result, the group index is large. Owning large group index means photons can effectively interact with gain medium and surface plasmon.

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08:45 - 09:00 Paper No.  2014-FRI-S0303-O006
Zhe Han Zhang Characteristics of III-N vertical cavity surface emitting lasers with lateral confinement apertures
Zhe Han Zhang,Ying Yu Lai,Yu Hsun Chou,Yu Sheng Wu,Tsu Chi Chang,Shen Che Huang,Tsung Lin Ho,Tien Chang Lu,

We investigated GaN-based vertical cavity surface emitting lasers (VCSELs) with an optical confinement aperture, and verified the transverse optical confinement characteristics using shallow etched mesa in the GaN-based VCSEL.

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09:00 - 09:15 Paper No.  2014-FRI-S0303-O009
Sheng-An Yang 40 Gb/s electroabsorption modulator–integrated DFB laser by two stack of multiple quantum well
Sheng-An Yang,Yi-Jhe Chen,Wei-hung Chen,Chia-Yan Lin,Jui-pin Wu,Yi-Jen Chiu,W. Lin,Y. H. Wu,R. T. Hsu,

Two stacks of multiple quantum wells have been used for integrating electroabsorption modulator (EAM) and DFB laser. Traveling wave electrode is designed for high speed operation, leading to SMSR of above 35dB, -3dB bandwidth of above 40GHz, and 40Gb/s performance.

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09:15 - 09:30 Paper No.  2014-FRI-S0303-O010
P.-C. Yeh Fabrication of enhancement-mode AlGaN/GaN MOSFETs with PEALD and PEC oxide
P.-C. Yeh,J.-H. Hung,B.-R. Lin,L.-H. Peng,

We reported the use of PEC-Ga2O3 for gate-oxide and PEALD-Al2O3 for passivation on AlGaN/GaN MOS-HEMT to achieve on/off ratio of 10^10. Our method allows Vth to increase from -4V to -1.77V by increasing oxide thickness while keeping gm and Id,sat unchanged. Device-parameter-extraction suggests this device could become enhancement-mode as PEC-oxide exceeds 18.5nm.

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