Student Paper Award Announced!!

Session Index

Solid State Lighting

Oral Session 1 - Solid State Lighting
Thursday, Dec. 4, 2014  13:30-15:00
Chair: Ching-Cherng Sun,Chia-Feng Lin
Room: B22
Notes:
13:30 - 14:00 Paper No.  2014-Thu-S0801-I001
Invited Speaker:
Sune Svanberg
Laser remote sensing of the atmosphere: Atoms, molecules, particles, insects and birds
Sune Svanberg,Sune Svanberg,

An overview of optical probing of the atmosphere will be given, where mostly active remotesensing techniques of the laser-radar type will be covered, but also some passive techniques employing ambient radiation. As the title suggests, objects of quite varying sizes can be studied. Mercury is the only pollutant in atomic form in the atmosphere, while other pollutants are either molecular or in particle form. Light detection and ranging (Lidar)techniques allow three-dimensional mapping of such constituents. More recently, flying insects and birds have been studied in projects of considerable ecological interest. Mostly, elastic backscattering and fluorescence techniques are employed. Some references to some recent activities by the author are given.

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14:00 - 14:15 Paper No.  2014-Thu-S0801-O003
Yu-Lin Tsai Award Candidate External quantum efficiency enhancement of GaN-based LEDs with multi-layers of nano-air-voids
Yu-Lin Tsai,Che-Yu Liu,Chirenjeevi Krishnan,Tsung-Sheng Kao,Da-Wei Lin,Martin D. B. Charlton,Chien-Chung Lin,Peichen Yu,Hao-Chung Kuo,

A novel mask-free fabrication process for homogeneously embedding multi-layers of nano-air-voids in GaN has been successfully developed. These nano-air-voids also show its great advantages in enhancement of the EQE up to 16.2% in GaN-based LEDs.

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14:15 - 14:30 Paper No.  2014-Thu-S0801-O008
An-Jye Tzou Award Candidate The Efficiency Droop Behavior Improvement through Barrier Thickness Modification for GaN-on-Silicon Light Emitting Diodes
An-Jye Tzou,Bing-Cheng Lin,Zen-Yu Li,Chun-Yen Chang,Hao-Chung Kuo,

The crack-free GaN-on-silicon light emitting diodes (LED) with improved droop behavior was achieved. Through the thinner design of quantum barriers (QBs), the LED with 8 nm-thick QBs shows a good peak EQE, and a 13.85% droop behavior was obtained.

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14:30 - 14:45 Paper No.  2014-Thu-S0801-O011
Tzu-Pei Chen Award Candidate Characteristics of green InGaN/GaN multiple quantum well grown on top-down nonpolar GaN nanorods arrays
Tzu-Pei Chen,Hao-Chung Kuo,Wei-Chi Hsu,Da-Wei Lin,Jhih-Kai Huang,Tsung-Sheng Kao,

Tip-free core-shell nonpolar green InGaN/GaN light-emitting diodes (LEDs) have been successfully designed and characterized. Electroluminescence measurement showed a slight blue-shift as the injected power increases. Through this 3-dimention current spreading layer, a high efficient 3D green LED device could be achieved.

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14:45 - 15:00 Paper No.  2014-Thu-S0801-O016
Yang Ta Shih Award Candidate Advantage of Asymmetric Triangular Multiple Quantum Wells in GaN-based Light Emitting Diodes
YangTa Shih,TienChang Lu,

We report on high-efficiency GaN-based LEDs using different asymmetric triangular multiple quantum well. The experiment results show that the gallium-face oriented inclination asymmetric triangular MQW (GOAT-MQW) and nitrogen-face oriented inclination asymmetric triangular MQW (NOAT-MQW) not only have better optical performance but reduce efficiency droop in compared to symmetric square MQW (SS-MQW). The simulation results were in good agreement with the experimental results.

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