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08:00 - 08:15
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Paper No. 2014-FRI-S0803-O001
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| Fu-Pang Chen
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Improvement in the light-output efficiency of high-power vertical LEDs using silicon dioxide current distribution layer
Fu-Pang Chen,
A novel current distribution layer (CDL) was employed to improve the current spreading of a vertical light-emitting diode. Based on a 55x55 mil2 power chip having optimized CDL thickness and width of 500Å and 50µm, the best of VF and LOP were 2.97 V and 671.8 mW, respectively.
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08:15 - 08:30
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Paper No. 2014-FRI-S0803-O010
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| Zong-Yi Tu
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A Large-area flexible phosphor film for superior performance of white light-emitting Diodes
Zong-Yi Tu,Chin-Wei Sher,Kuo-Ju Chen,Bing-Cheng Lin,Hau-Vei Han,Min-Hsiung Shih,Chien-Chung Lin,Hao-Chung Kuo,Chien-Chung Fu,Sheng-Huan Chiu,
This study demonstrates a low cost and flexible phosphor film for both cool and warm white LEDs. The luminous efficiency was improved by 6.7% and 7%, compared to conventional white LEDs, respectively. Furthermore, the flexible LEDs were demonstrated and show the great potential in lighting or biomedical applications.
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08:30 - 08:45
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Paper No. 2014-FRI-S0803-O017
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| Bo-Yu Wei
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Investigation of Quantum Dot Color Conversion in GaN-Based Minimized LEDs with Reflectors and ZnO Nanorod Arrays
Chao-Jung Cheng,Hsin-Yin Lee,Ching-Ting Lee,Ying-Chien Chu,Yen-Hsiang Fang,Chia-Hsin Chao,Ming-Hsien Wu,Bo-Yu Wei,
In this work, the distributed bragg reflector and the hybrid bragg reflector were respectively stacked at the top and the bottom of the minimized QDs-LEDs with the zinc-oxide nanorod. The resulting characteristics verified that the chromaticity coordinate was located at (0.59, 0.26) and the red illumination intensity increased 57.4 %.
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08:45 - 09:00
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Paper No. 2014-FRI-S0803-O028
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| Wei-Ju Hsu
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InGaN light-emitting diodes with embedded air-gap disks through laser-drilling and electrochemical processes
Wei-Ju Hsu,
InGaN-based light-emitting diodes with an embedded air-gap disk structure were fabricated using a laser drilling process and an electrochemical (EC) wet etching process to enhance the light extraction efficiency. The air-disk structure was formed by a one-step epitaxial growth process and a selective wet etching process on a highly doped GaN:Si layer. The light output power of the treated LED structure was enhanced by 22% compared with a conventional LED at 20 mA.
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09:00 - 09:15
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Paper No. 2014-FRI-S0803-O032
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| Yu-Feng Yin
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Optical Frequency Response of Light-emitting Diodes with Embedded Photonic Crystals
Yu-Feng Yin,Yen-Hsiang Hsu,Liang-Yu Su,Yuan-Fu Hsu,Li-Cheng Chang,Chao-Hsin Wu,JianJang Huang,
Here, sub-GHz modulation of GaN-based photonic crystal light-emitting diodes (PhCLEDs) were demonstrated. The higher operation speed is attributed to faster radiative carrier recombination of extracted guided modes from the PhC microcavity. The optical -3-dB bandwidth up to 240 MHz (an 1.5-fold increase as compared to conventional LEDs) is achieved.
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09:15 - 09:30
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Paper No. 2014-FRI-S0803-O040
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| Bing-Cheng Lin
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Advantages of InGaN/GaN Light-Emitting Diodes with a Quaternary Superlattices EBL
Bing-Cheng Lin,Chien-Chung Lin,Po-Tsung Lee,Hao-Chung Kuo,
InGaN/GaN light-emitting diodes (LEDs) with AlInGaN/AlGaN quaternary superlattices (SLs) electron blocking layer (EBL) were grown by metal-organic chemical vapor deposition. The simulation results demonstrated the LED with a AlInGaN/AlGaN quaternary SLs EBL have superior hole injection efficiency and lower electron leakage over the LED with a conventional AlGaN EBL.
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