Student Paper Award Announced!!

Session Index

Photovoltaic Technology

Oral Session 2 - Photovoltaic Technology
Thursday, Dec. 4, 2014  15:30-17:00
Chair: Liann-Be Chang,Yeu-Long Jiang
Room: F6
Notes:
15:30 - 15:45 Paper No.  2014-Thu-S0902-O001
Yi-Cheng Lin Award Candidate Light Management in Organic/Gallium Arsenide Hybrid Solar Cells
Yi-Cheng Lin,Kai-Yuan Cheng,Wei-Sheng Weng,Yu-Cheng Chen,Peichen Yu,Hsin-Fei Meng,

We use wet etching method to improve the light absorption of GaAs hybrid solar cell. The weighted reflectance decreases to 12.75% and PCE can achieve 9.8%. According to photon recycling model, conducting wafer lift-off process and place back reflector which can improve Voc by 0.04V .

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15:45 - 16:00 Paper No.  2014-Thu-S0902-O002
Yu-Cheng Chen Award Candidate Using MacEtch to Fabricate Nanostructure on Organic-Inorganic Silicon Based Hybrid Solar Cells
Yu-Cheng Chen,Peichen Yu,

Metal-assisted chemical etching is a wet etching method that produces anisotropic high aspect ratio. The diameter and length of Si nanowires could be precisely controlled. Here we use MacEtch to fabricate our devices, the short-circuit current was enhanced to 34.0mA/cm2, with the power conversion efficiency of 11.9%.

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16:00 - 16:15 Paper No.  2014-Thu-S0902-O005
Chung-Lin Chun Award Candidate 980-nm Laser-driven Interdigitated Back-contact Solar Cells for Biomedical Applications
Chung-Lin Chun,Tsung-Yen Chuang,Yung-Jr Hung,Meng-Syuan Cai,Hsiu-Wei Su,San-Liang Lee,

We demonstrate an 980-nm laser-driven CMOSenabled interdigitated back-contact (IBC) solar cell for biomedical applications. The design of this device leverages from the CMOS process to allow two-dimensional junction formation and uniform series resistance, but suffers from poor minority carrier properties in bulk substrate. This issue is partially solved in this work by thinning down the substrate to 60 m, leading to an ultimate efficiency of 15%. After inserting an emulated tissue loss, a 1.67 mm2 IBC solar cell is capable of generating an electrical power of 159 W under a concentrated illumination intensity of 10 mW, which is within the conservative limit to human skin.

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16:15 - 16:30 Paper No.  2014-Thu-S0902-O006
Cheng-En Cheng Award Candidate Graphene oxide as hole transport layers for P3HT:PCBM solar cells
Cheng-En Cheng,Cheng-Wei Tsai,Tsung-Wu Lin,Zingway Pei,Chen-Shiung Chang,Forest Shih-Sen Chien,

Graphene oxide (GO) is prepared to be the alternative hole transport layers (HTLs) for polymer solar cells (PSCs). The thickness of GO-HTLs are optimized. The PSC with 2-nm UV-treated GO HTL has a higher hole collection efficiency, resulting a compatible photovoltaic performance to a conventional PSC with PEDOT:PSS HTL.

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16:30 - 16:45 Paper No.  2014-Thu-S0902-O007
Chun-Yang Lu Award Candidate Application of Transparent and High-Conductivity Conducting Polymer for Dye-Sensitized Solar Cells
Chun-Yang Lu,Chih-Hung Tsai,Yu-Tang Tsai,Chung-Chih Wu,

Conducting polymers, such as PEDOT:PSS, have been considered as one possible replacement of Pt as more cost-effective counter electrodes in DSSCs. However, earlier attempts in replacing Pt counter electrodes with PEDOT:PSS mostly resulted in substantially degraded DSSC efficiencies, due to poorer conductivity and electrochemical activity of PEDOT:PSS. Taking advantage of the development of high-conductivity PEDOT:PSS in recent years, in this work we report the preparation of high-conductivity PEDOT:PSS (up to ~1000 -cm) and its application as counter electrodes to achieve DSSC efficiencies (>9%) comparable to those achieved with Pt electrodes.

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16:45 - 17:00 Paper No.  2014-Thu-S0902-O008
Tung-Chuan Shih InAs/GaSb superlattice infrared photo-diodes with InSb strain compensator
Tung-Chuan Shih,

30-period Type-II 5 ML InAs/5 ML GaSb superlattice Infrared photo-diodes are investigated. The device has exhibited a 4.25 m cut-off wavelength at 10K. With an additional 1 ML InSb layer grown between GaSb/InAs interfaces, compressive-strained SLs are obtained, which provide a possibility of strain-compensated InAs/GaSb SL structure.

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