Student Paper Award Announced!!

Session Index

Thin Film Technology and Optical Engineering

Oral session 1 - Optical Thin Film (I)
Thursday, Dec. 4, 2014  13:30-15:00
Chair: Shiuh Chao,Sheng-Hui Chen
Room: B21
Notes: N/A
13:30 - 14:00 Paper No.  2014-Thu-S1001-I003
Invited Speaker:
David Blair
Advanced Michelson Interferometers for Laser Interferometer Gravitational Wave Detection.
David Blair,

The detection of gravitational waves from black hole systems in the universe requires laser interferometers with exceptional specifications to enable them to detect gravitational wave induced strains with amplitude ~ 10-24 on a scale of kilometers. Such sensitivity requires very high laser power, mirrors with exceptionally low acoustic and optical losses, and exceptionally small figure errors. This must be combined with advanced quantum optics techniques such as optical squeezing. Currently three advanced detectors are preparing for observational runs at sensitivity sufficient to have a high probability of first detection. Much effort is underway to define the next generation of instruments which will be even more sensitive. This talk will focus mainly on the optical engineering challenges of gravitational astronomy, and on aspects of opto-mechanics that are relevant to other areas of physics and engineering.

 Preview abstract
14:00 - 14:15 Paper No.  2014-Thu-S1001-O006
Ciieng-Luen Zieng Award Candidate The accomplishment of optical monitoring for optical filter with luminescent layer
Ciieng-Luen Zieng,Yu-Jen Chen,Cheng-Chung Lee,Cheng-Chung Lee,

This article presents the fabrication of a narrow band pass filter, NBF, embedded luminescent layer under control of turning point monitoring. The stability of ion beam sputter deposition and self-compensation effect of a NBF monitored by turning point method well assist the deposition in spite of the process mixing dry and wet process. The experimental spectrum indicates that the error of center wavelength of the NBF is less than 1 nm.

 Preview abstract
14:15 - 14:30 Paper No.  2014-Thu-S1001-O009
Mu-Chi Liu Award Candidate X-ray Absorption Near Edge Structure of Silicon in Indium Arsenide
Mu-Chi Liu,Zhe Chuan Feng,Hao-Hsiung Lin,

We report on Si K-edge XANES of heavily Si doped InAs grown by GSMBE. A model of Si atom in group-III sublattice with +0.4 ionization and shorten second and third shell distances well fits the experimental result.

 Preview abstract
14:30 - 14:45 Paper No.  2014-Thu-S1001-O018
Ling-Chi Kuo Award Candidate Annealing effect on the mechanical loss of the ion beam sputtered nano-layer structures with application to the dielectric mirror for the laser interference gravitational wave detector
Ling-Chi Kuo,

This paper investigated thin film with low mechanical loss for high reflective mirror. A conventional quarter-wave-layer of TiO2 was replaced by a stack of TiO2/SiO2 in the nano-meter scale with total optical thickness remained quarter-wave. Thinner layer design has higher threshold temperature for crystallization. Mechanical loss of the 19-layers nano-layer stack was reduced with annealing at 300oC without crystallization.

 Preview abstract
14:45 - 15:00 Paper No.  2014-Thu-S1001-O021
Yu-Xen Lin Application of dynamic interferometry on thin film measurement
Yu-Xen Lin,Meng-Chi Li,Chung-Cheng Lee,

A method to measure the thickness and optical constant of thin-film based on dynamic interferometry is described. The thin film property is retrieved from reflectance and phase spectra. By micro-polarizer pixelated camera, a dynamic interferometry can be vibration-insensitive and capable to measure films with absorption as well as multi-layer films.

 Preview abstract

Thin Film Technology and Optical Engineering

Oral session 2 - Optical Thin Film (II)
Thursday, Dec. 4, 2014  15:30-17:00
Chair: Cheng-Chung Lee,Yi-Jun Jen
Room: B21
15:30 - 16:00 Paper No.  2014-Thu-S1002-O003
Invited speaker
Cheng-Chung Lee
Progress in coatings for optics and photonics
Cheng-Chung Lee,

Coatings have been applied widely in optics and photonics. They not only improve the optical performance of high quality optical devices, but also are key parts in optical operations. The evolution of optical interference coatings from the theory, the design to the manufacture will be introduced. Some interesting but challenging topics for the future will also be discussed.

 Preview abstract
16:00 - 16:15 Paper No.  2014-Thu-S1002-O004
Yung Hsiang Hsieh Award Candidate Influence of organo-silicon film composition for barrier films
Yung Hsiang Hsieh,

Deposite the orgnao-silicon film for barrier films by magnetron PECVD. Increase the HMDSO and oxygen flow to influence the composition of organo-silicon film. The composition of organo-silicon films dominated by Si(-O-)4 has best WVTR value is 0.139 g/m2/day

 Preview abstract
16:15 - 16:30 Paper No.  2014-Thu-S1002-O009
Yu-Zhong Lin Award Candidate Using Hydrothermal Method to Grow High Conformity Sidewall ZnO Nanorods
Yu-Zhong Lin,Hao-Yu Wu,Yu-Wen Cheng,Ching-Fuh Lin,

High conformity sidewall ZnO nanorods are manufactured on etched Si by hydrothermal method. The morphology of ZnO nanorods is examined by scanning electron microscopy. Also, the results show that we successfully spin coat ZnO seed layer on the sidewalls of grooves. ZnO nanorods are grown in grooves of etched Si.

 Preview abstract
16:30 - 16:45 Paper No.  2014-Thu-S1002-O010
Huang-Wei Pan Award Candidate Stress effect on mechanical loss of the SiNX film deposited with PECVD method on silicon cantilever
Huang-Wei Pan,

Stress of SiNx film can be adjusted easily by tuning the gas flow ratio of SiH4/NH3 in PECVD. In this paper, it is found that mechanical loss of SiNx film decreases as the stress increases. This exciting behavior describes that SiNx is a advantageous material for low mechanical loss coating.

 Preview abstract
16:45 - 17:00 Paper No.  2014-Thu-S1002-O015
Gun-Han Lyu Negative index of a symmetrical metal-dielectric film stack
Gun-Han Lyu,Yi-Jun Jen,

A five-layered symmetrical film stack MDMDM that consists of a dielectric film D and a metal film M are analyzed using the film matrix method. The condition to have a negative refractive index is analyzed for three different wavelengths. It is demonstrated that the negative real equivalent refractive index exists over a wide angle range.

 Preview abstract

Thin Film Technology and Optical Engineering

Poster Session 2
Thursday, Dec. 4, 2014  16:40-17:50
17:00 - 17:30 Paper No.  2014-Thu-P1001-P003
Yan-Zhang Ho Award Candidate Organic polaritons in metal-dielectric mirror microcavities
Yan-Zhang Ho,Ching-Wei Cheng,Yan-Ting Chen,Jui-Fen Chang,Cheng-Chung Lee,

We demonstrate a room-temperature operation of exciton-polariton optical devices with layer-by-layer assembled J-aggregate thin films of (DEDOC) cyanine dyes. Based on the fabrication results, the modifying DEDOC thin films are placed in a metal-dielectric mirror microcavity, and measured by angle-resolved reflection spectrum to observe the polariton states at room temperature.

 Preview abstract
17:00 - 17:30 Paper No.  2014-Thu-P1001-P004
Bao-Chung Chi Award Candidate Raman Analysis of Graphene Crystals Grown on Cu (111) Thin Film
Bao-Chung Chi,Yen-Lin Chu,Shih-Hao Chan,Sheng-Hui Chen,Chien-Cheng Kuo,

In this work, Raman spectroscopy has been applied to analyze the Raman fingerprint of graphene crystals. In addition, we manufactured the Cu (111) thin film on a sapphire (0001) substrate by using sputtering method. The graphene crystals grown on the Cu (111) thin film and a polycrystalline Cu foil by chemical vapor deposition. The result indicated that the graphene crystals grown on Cu (111) has “defect-free” morphology in Raman mapped image.

 Preview abstract
17:00 - 17:30 Paper No.  2014-Thu-P1001-P009
Wei-Lun Zhong Award Candidate Liquid Salinity Sensors Based on Lossy Mode Resonance and D-Shaped Fiber Coatings
Wei-Lun Zhong,Chuen-Lin Tien,Po-Wei Lee,Po-Jui Huang,Shun-Hong Huang,Ching Hsu,

We present a new type liquid salinity sensor combined with side-polished fiber and thin-film coatings. The sensing mechanism is based on lossy mode resonance (LMR) phenomenon. The sensitivity of D-LMR type liquid salinity sensor is analyzed for different liquid salinities of salt water. The sensitivity of 0.837 nm/SU can be obtained for D-LMR type liquid salinity sensor.

 Preview abstract
17:00 - 17:30 Paper No.  2014-Thu-P1001-P010
Cheng-Hung Wang Award Candidate Large Single-Crystal Graphene Grown by CVD
Cheng-Hung Wang,Meng-Yu Lin,

Large single-crystal graphene flakes are grown on Cu foils by using CVD. The effect of H2 etching on the small graphene seeds on the initial growth stage is investigated. Transistors with high mobilities are also demonstrated in this report.

 Preview abstract
17:00 - 17:30 Paper No.  2014-Thu-P1001-P015
Tsung-Yo Tsai Award Candidate Temperature-dependent electrical and mechanical properties of sputtering different doped ZnO thin films
Tsung-Yo Tsai,Chuen-Lin Tien,Po-Han Chen,Po-Wei Lee,Chi-Hong Huang,Sheng-Yun Wang,

Two kinds transparent conductive oxide films, AZO and GZO, were deposited by radio-frequency sputtering on NBK7 glass substrates. We measured and compared the temperature-dependent resistivity and residual stress properties. The results show that the resistivity of AZO thin films decrease with increasing the RF power, but that of GZO is increasing. The residual stress values of AZO thin films increase with increasing the RF power in the range of 60-100 W, but the residual stress values of GZO thin films decrease. Both resistivity and compressive stress in AZO and GZO thin films decrease as the heating temperature increases from room temperature to 90℃.

 Preview abstract
17:00 - 17:30 Paper No.  2014-Thu-P1001-P016
Shun-Po Yang Award Candidate Organic Solar Cell Component Process with Carbon Nanotubes and Carbon Fibers
Shun-Po Yang,Meng-Lin Tsai,Jr Hau He,Jiun-Haw Lee,Chi-Feng Lin,Tien-Lung Chiu,

We developed a process to fabricate a top-illuminated organic solar cell onto the carbon fibers and carbon nanotubes (CFs&CNTs) substrate using a organosilicon compounds, poly(dimethylsiloxane) (PDMS) to smooth the substrate.

 Preview abstract
Paper No.  2014-Thu-P1001-P021
Wei-Chiang Sun Effect on duty cycle in high power pulsed reactive magnetron sputtering of niobium oxide
Chien-Jen Tang,Wei-Chiang Sun,Hong-Bin Chang,Guan-Syun Huang,Cheng-Chung Jaing,

The Niobium Oxide thin films were deposited by DC- ,and high power pulsed reactive magnetron sputtering. The refraction indices, extinction coefficients, surface roughness of NbOx films were analyzed via spectroscopy and atomic force microscope.

 Preview abstract
Paper No.  2014-Thu-P1001-P022
Chien-Jen Tang Rugate filter made with Nb2O5-SiO2 composite films by fast-alternative bipolar-pulsed reactive magnetron sputtering
Chien-Jen Tang,Zong-Ting Hua,Wei-Chiang Sun,Li-Jie Chen,

Nb2O5-SiO2 composite films and rugate filter were prepared by fast-alternative bipolar-pulsed magnetron sputtering using niobium and silicon targets. The optical properties, surface roughness and stress behaviors of composite films and rugate filter were investigated by spectrophotometer, atomic force microscope and phase-shift Twyman-Green interferometer.

 Preview abstract
Paper No.  2014-Thu-P1001-P027
Yu-Chin Lan Titanium dioxide optical thin film deposited by plasma-assisted sputtering deposition
Yu-Chin Lan,

Titanium oxide (TiO2) films were deposited by the plasma-assisted DC sputtering in this study. The effects of DC power, current of plasma, the oxygen partial pressure on the optical properties of TiO2 films were investigated.

 Preview abstract
Paper No.  2014-Thu-P1001-P028
Wei-Lun Zhong Measurement of Surface Roughness of D-shaped Fiber and Thin Film Coatings by Microscopic Interferometry with Fourier Transform Method
Chuen-Lin Tien,Chi-Yuan Li,Wei-Lun Zhong,Tsung-Yo Tsai,

A fast and cost-effective approach to measure the surface roughness of thin films coated on D-shaped fibers is presented. We proposed a modified Michelson microscopic interferometer combined with 2D fast Fourier transform (FFT) method to measure the surface roughness of thin films and D-shaped fibers. The results show that the surface roughness of D-shaped fiber without coating is 1.19 nm and the surface roughness is 1.11 nm after AZO coating.

 Preview abstract
Paper No.  2014-Thu-P1001-P033
Chih-Hao Chang Highly efficient blue organic light-emitting diodes using Mo-doped GaZnO as flexible anode
Chih-Hao Chang,

Flexible organic light-emitting diodes (OLEDs) have drawn attention due to their potential applications in wearable optoelectronics. In this study, a novel flexible transparent conductive oxide which combining molybdenum and GZO (MGZO) has been developed. Blue phosphorescent OLEDs based on flexible MGZO anode achieved high efficiencies of 21.3% and 49.2 lm/W.

 Preview abstract
Paper No.  2014-Thu-P1001-P034
Jun-Ji Chen X-ray Absorption and Excitation of Rb Co-doped CsI:Tl Film
Hui-Huang Hsieh,Jun-Ji Chen,

The (200) oriented CsI films with Tl and Rb doping have been grown on transparent substrate. High brightness spot induced by x-ray on back side of substrate was observed. The wavelength of photoluminescence peak is 512 nm. The I LI x-ray absorption near edge show the position of hole captured.

 Preview abstract
Paper No.  2014-Thu-P1001-P039
Yu-Ting Hsu Photocatalytic Study of Bismuth Doped Zinc Oxide Prepared by Spray Pyrolysis:The effect of Annealing
Yu-Ting Hsu,Tzu-Yang Lin,Wen-How Lan,Yu-Hsuan Huang,Huang-Ming Chang,Mu-Chun Wang,Cheng-Fu Yang,Kai-Feng Huang,

The unintentionally doped and bismuth doped zinc oxide was prepared by spray pyrolysis. The crystalline quality shows the (002) and (101) planes. The bismuth doped sample shows the improved photocatalytic activity through the photodegradation of congo red under UV-light irradiation. High temperature treatment was applied to study the annealing effect.

 Preview abstract
Paper No.  2014-Thu-P1001-P040
Cheng-Han Chiang An improvement of narrow band-pass filter fabrication based on reflection coefficient monitoring
Cheng-Han Chiang,Meng-Chi Li,Cheng-Chung Lee,

A simple and excellent method, reflection coefficient monitoring, has been demonstrated for multilayer thin-film deposition. Compared with other optical monitoring methods, the reflection coefficient monitor has more uniform monitoring sensitivity and better error compensation ability. This provides a much better way to decrease the defect rate of optical coating production.

 Preview abstract
Paper No.  2014-Thu-P1001-P045
Song-Ting Yang Demonstrate a Silicon Thin Film fabrication by Two Step Metal-Assisted Chemical Etching
Song-Ting Yang,Chien-Ting Liu,Thiyagu Subramani,Chen-Chih Hsueh,Ching-Fuh Lin,

We fabricate a Silicon thin film by metal-assisted chemical etching (MacEch). Generally, it is hard to make a large size silicon thin film. Here we demonstrate a low cost and simple method to do silicon thin film process. Thus, this method is competitive for commercial applications

 Preview abstract
Paper No.  2014-Thu-P1001-P051
Wu ping yien The study of optical Transmittance and electrical conductivity of Fluorine-Doped Tin Oxide Films
Wuping yien,

In this research, FTO thin films were prepared by the spray pyrolysis technique on glass substrate at temperatures from 440℃ to 480℃.Dehydrate stannous chloride and ammonium fluoride were used as sources for tin and fluorine, respectively. The fluorine doping level ranging from 1at% to 90at% in our samples is adjusted to optimize their optical and electrical properties. After the films were sintered, the crystal structure was investigated by x-ray diffraction, the mobility and carrier concentration were determined by Hall Effect measurement, the optical transmittance was analyzed in visible light region, and the film thickness measurement by Spectral interference.

 Preview abstract
Paper No.  2014-Thu-P1001-P052
Hung-I Li Absorption and stress of TiO2-MgF2 composite films
Hung-I Li,Cheng-Chung Jaing,Fu-Jun Lu,Chien-Jen Tang,Yeuh-Yeong Liou,Bing-Mau Chen,Pang-Shiu Chen,

The composition-dependent absorption and stress of TiO2-MgF2 composite films prepared by electron-beam evaporation at a substrate temperature of 200 °C were investigated with an spectrophotometer, spectroscopic ellipsometer, and phase-shifting Fizeau interferometer, respectively. The various compositions were obtained by mixing the starting materials of Ti3O5 and MgF2 in a crucible.

 Preview abstract
Paper No.  2014-Thu-P1001-P056
Yuan-Di Chen Optical properties of square beams generated by liquid crystal spatial light modulator
Yuan-Di Chen,Wu-Jung Tsai,Sung-Ho Liu,

We measure the optical properties of square beams generated by liquid crystal spatial light modulator (LCSLM). The Gaussian beam transforms into square beams with four sizes. Optical profiler is used to record the details in the square beams. The polarization of these beams is examined as well.

 Preview abstract
Paper No.  2014-Thu-P1001-P057
Y. C. Wang Low Temperature Physical Vapor Deposition of Copper Film on Flexible Substrate
Y. C. Huang,S. C. Shen,C. C. Huang,G. W. Jain,Y. C. Wang,

In order to keep low temperature and less than 120°C in deposition process, we proposed the method for completely continuous and highly conductive thick copper films with the growth rate per cycle varied near 800nm on the substrate surfaces and then for cooling rate 0.5°C/sec on metallic flexible substrate.

 Preview abstract
Paper No.  2014-Thu-P1001-P060
Chein-Hsueh Liu Optimization Design of Optical Binocular System
Chein-Hsueh Liu,Chuen-Lin Tien,

This paper presents an optimization design of binoculars telescope system in the visible band for 7° full field of view (FOV). The least damped square method is used to optimize the aberrations. We used ZEMAX software as system simulation tool. After optimization design, the spot size is 21.37 μm. The field curvature is ± 0.02mm and distortion is ± 2.5%. The total length is 199.8 mm for the binocular system.

 Preview abstract
Paper No.  2014-Thu-P1001-P061
Yao-Te Wang Study of the Ag-Cu Codoped ZnO Thin Film
Zih-Syuan Jiang,Yao-Te Wang,

In this study, to improve the p-type conductivity Ag-Cu codoped ZnO thin films on the silicon substrate were prepared by RF magnetron sputtering system. First of all, we found the 1at%Cu-doped ZnO thin film prepared at 650℃possess the best p-type conductivity .Base on this result , Ag-Cu codoped ZnO thin films more sintered to investigate their structure by X-ray diffraction and their electronic properties via Hall Effect measurement.

 Preview abstract
Paper No.  2014-Thu-P1001-P065
Chih-Hao Chang Highly efficient red, green, and blue organic lightemitting diodes using exciplex as host
Chih-Hao Chang,

Recently, exciplex had drawn attention because of its potential for efficient electroluminescence or being an emitting host in organic light-emitting diodes (OLEDs). In this study, we successfully demonstrated that efficient blue, green, and red PhOLEDs with same exciplex host achieve maximum power efficiencies of 37.9 lm/W, 42.6 lm/W, and 5.4 lm/W, respectively.

 Preview abstract
Paper No.  2014-Thu-P1001-P068
Chang Mei-Ying Enhanced conductivity of PEDOT: PSS electrode by different treatment for ITO-free organic light emitting diodes
Chang Mei-Ying,LIn Yao-Wen,

Flexibility is one of the biggest features of OLED. However, there is a big problem brought by the ITO anode. ITO will crack when the substrate is bent in a large angle and this might result in decreasing the conductivity. Conductive Polymer, PEDOT:PSS, has lots of advantages in ITO-free devices.

 Preview abstract
Paper No.  2014-Thu-P1001-P069
Chieh-Tsan Hung Low Temperature Plasma Modeling Tools for Material Processing
Chieh-Tsan Hung,Meng-Hua Hu,Yun-Min Lee,Jong-Shinn Wu,

A suite of multi-physics simulation tools of low-temperature plasma physics and chemistry for material processing is presented. The plasma fluid modeling coupled with a gas flow solver using a unique temporal multi-scale algorithm has employed for the chamber-scale simulation, in which the modularized solvers are parallelized using high performance computing.

 Preview abstract
Paper No.  2014-Thu-P1001-P072
Chung-Chih Hsieh Formation Of Columnar CsI And CsI(Na) Scintillation Films Deposited By Thermal Evaporation
Chung-Chih Hsieh,

CsI is an excellent scintillator, whose fluorescence response is good for x-ray and γ-ray, and it can convert invisible radiation into visible light. In this study, it is mainly focused on fluorescent properties of cesium iodide films doped sodium (CsI:Na). The CsI film will be coated by using the protective Al layer to resist moisture better to enhance the luminous efficiency of the film.

 Preview abstract
Paper No.  2014-Thu-P1001-P073
Mula Sigiro Influence of Different Dopants on the Structure and Optical Properties of Molyb-denum Disulfide Single Crystals
Mula Sigiro,Ying-Sheng Huang,Ching-Hwa Ho,

We report on extensive structural and optical studies of a variety of pure and Re-, Au-, Fe-doped molybdenum disulfide (MoS2) single crystals which grown by chemical vapor transport (CVT) method. In order to compare structural properties of crystals with different doping we conducted X-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements. For optical characterization we used Raman spectroscopy, piezoreflectance (PzR), electrolyte electroreflectance (EER) and photoconductivity (PC).

 Preview abstract
Paper No.  2014-Thu-P1001-P076
Meng-Hao Tsai Measurement of angular displacement system based on Talbot effect and moiré method
Ju-Yi Lee,Meng-Hao Tsai,Syu-Dong Chen,

We proposed a new method based on the moiré technique and Talbot effect to measure the angular displacement. The experimental results demonstrate that the measurement range of our system can achieve plus and minus 6 dgree. Considering the high-frequency noise, the measurement resolution of the system is about 0.36 arcsec.

 Preview abstract

Thin Film Technology and Optical Engineering

Oral session 3 - Semiconductor Film
Friday, Dec. 5, 2014  08:00-09:30
Chair: Chia-Feng Lin,Chun-Feng Lai
Room: B21
08:00 - 08:15 Paper No.  2014-FRI-S1003-O001
Chih-Hao Wang Award Candidate GaN-Based Enhancement-Mode High Electron Mobility Transistors for Power Devices
Chih-Hao Wang,

This paper demonstrate an enhancement-mode (E-mode) GaN based high electron mobility transistors (HEMT) with a P-type layer on the Si substrate. Small devices and power devices are fabricated in this research. The threshold voltage (Vth) is 1.5 V. The saturation drain can attain 6.42 A.

 Preview abstract
08:15 - 08:30 Paper No.  2014-FRI-S1003-O002
Yuan Chang Jhang Award Candidate InGaN Optoelectronic Devices with Nanoporous GaN Distributed Bragg Reflector Structure
YuanChang Jhang,

InGaN optoelectronic structures with bottom nanoporous-GaN/u-GaN distributed Bragg reflectors (DBR) were fabricated. Mesa regions with bottom DBR structures were treated by pulse 355nm laser scribing and electrochemical etching processes. Si-heavy doped GaN:Si layers had been transformed into low refractive index nanoporous GaN structure for the DBR structures. Eight pairs stacked refractive index difference consisted of 1/4λ nanoporous GaN layer and 3/4λ u-GaN layer for the bottom DBR structure. The central wavelength of DBR structure was located 410nm with a 50nm stop-band width and about 60% reflectance. Line-scan photoluminescence spectra of treated mesa region were measured to analyze the optical properties that the mesa surrounded with the DBR structure. High efficiency electroluminescence properties were observed on the treated region with bottom DBR structure that potential for the resonant-cavity optoelectronic device application.

 Preview abstract
08:30 - 08:45 Paper No.  2014-FRI-S1003-O005
Wei-Chen Shen Award Candidate Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors
Wei-Chen Shen,Yung-Chi Yao,Pin-Guang Chen,Zu-Po Yang,Yung-An Hsieh,Ming-Han Liao,Min-Hung Lee,Mei-Tan Wang,Jung-Min Hwang,Ya-Ju Lee,

We report a novel monolithically integrated GaN-based light-emitting diode (LED) with metal-oxide-semiconductor field-effect transistor (MOSFET).The MOSFET is fabricated on the n-type GaN layer of the LED after dry etching, and connected to the LED. The monolithically exhibits good characteristics in the modulation of gate voltage and capability of driving injected current.

 Preview abstract
08:45 - 09:00 Paper No.  2014-FRI-S1003-O006
Chao-Wei Wu Award Candidate Thermoelectric Characteristic of the Rough InN/GaN Core-Shell Nanowires
Chao-Wei Wu,Yuh-Renn Wu,

An analysis to model the thermoelectric(TE) effects of the rough InN/GaN core-shell nanowires(NWs) with wire di- ameter ranging from 25nm to 100nm is proposed. The optimized condition of the proposed rough InN/GaN core-shell TE NWs is studied and the highest ZT obtained is 0.8598 at 300K and 1.713 at 1000K.

 Preview abstract
09:00 - 09:15 Paper No.  2014-FRI-S1003-O008
jiangnan dai Investigation of the nonpolar a-plane MgZnO films grown on a-GaN/r-sapphire templates by pulsed laser deposition
jiangnan dai,Jun Zhang,Wu Tian,Feng Wu,Yanyan Fang,Zhihao Wu,Changqing Chen,

Nonpolar a-plane MgZnO films were grown on different a-GaN/r-sapphire templates by pulsed laser deposition (PLD). High-quality a-plane MgZnO epitaxial films were deposited on the optimized 1000 ºC a-GaN/r-sapphire template. Temperature-dependent PL measurements of a-plane MgZnO films revealed an S-type temperature dependence of the excitonic recombination energy, suggesting the localization of excitons takes place.

 Preview abstract
09:15 - 09:30 Paper No.  2014-FRI-S1003-O009
Cheng Yi Research on Structural Properties of Cu doped Ga2O3 Films Prepared by Electron Beam Evaporation
Cheng Yi,

Cu doped Ga2O3 thin films are deposited on sapphire substrates using electron beam evaporation method with subsequent annealing at 1000 ℃ for 1 hour. The influence of the Cu dopant on the crystal structures and surface morphologies of Ga2O3 films are investigated by X-ray diffraction and scanning electron microscopy.

 Preview abstract

Thin Film Technology and Optical Engineering

Oral session 4 - Sensor
Friday, Dec. 5, 2014  09:30-11:00
Chair: Hsin-Ying Lee,Ann-Kuo
Room: B21
09:30 - 09:45 Paper No.  2014-FRI-S1004-O001
Tsung-Han Yang Award Candidate High Sensitivity IGZO-TFT Protein Biosensors Modified with ZnO Nanorods
Tsung-Han Yang,Shu-Wen Chen,Tsung-Lin Yang,Jian-Jang Huang,

We demonstrate a biosensor consisting of an IGZO-TFT and a gold sensing pad. The ZnO nanorods are also applied to the sensing pad to improve the sensitivity because of its biocompatibility and high surface-to-volume ratio. The biosensor can selectively detect 36.2fM of EGFR in the total protein solution of 0.1ng/ml.

 Preview abstract
09:45 - 10:00 Paper No.  2014-FRI-S1004-O004
Ming-Yen Chuang Award Candidate Gas Permeable Silver Nanowire Electrode for Realizing Vertical Type Sensitive Gas Sensor
Ming-Yen Chuang,Hsiao-Wen Zan,Peichen Yu,Yi-Chun Lai,Hsin-Fei Meng,

We successfully demonstrated a Poly (3-hexylthiophene) (P3HT) diode gas sensor with silver nanowires as a gas permeable top electrode. The silver nanowires dispersed in isopropyl alcohol (IPA) were used to form a top electrode by a simple drop-casting method. The meshes between nanowires enable gas molecules pass through the electrode and diffuse into the underlying organic sensing layer to dope or dedope the organic semiconductor. Here, the proposed sensor successfully detects ammonia down to 30 parts-per-billion (ppb), which is sensitive enough in many applications including breath ammonia monitoring as a point-of-care application.

 Preview abstract
10:00 - 10:15 Paper No.  2014-FRI-S1004-O005
I-Chun Lai Award Candidate Single-shot Laser Treatment Provides Quasi–three-dimensional Paper-based Substrates for SERS with Attomolar Sensitivity
I-Chun Lai,Chen-Chieh Yu,Sin-Yi Chou,Yi-Chuan Tseng,Shao-Chin Tseng,Yu-Ting Yen,Hsuen-Li Chen,

Quasi-3D SERS paper with attomolar sensitivity is developed by laser-induced photothermal effect, and large numbers of plasmonic nanoparticles are prepared in the depth of focus of a Raman microscope, leading to a significant enhancement of SERS signals.

 Preview abstract
10:15 - 10:30 Paper No.  2014-FRI-S1004-O008
Ming-Yen Chuang Vertical Nano-Junction Organic Diode as Sensitive Sensing Array
Ming-Yen Chuang,Jian-Nan Chen,Hsiao-Wen Zan,Chia-Jung Lu,

We demonstrate an extremely sensitive ammonia gas sensor based on vertical organic diode to exhibit a 3-ppb detection limit. Using phenyl-C61-butyric acid methyl ester (PCBM) as the sensing layer, the nanoporous electrode enlarges the surface to volume ratio and hence realizes the ppb-regime sensitivity. The proposed vertical nano-junction (VNJ) organic diode is then investigated by changing the semiconducting materials (i.e. sensing material). In addition to a pure n-type or p-type sensing material, the blend of n/p organic semiconductor (PCBM/P3HT) is used to react with gas. Changing the n/p blending ratio from 0% to 100% deliver a tunable gas response to ammonia and nitric oxide, hence demonstrating a sensing map concept with good selectivity.

 Preview abstract
10:30 - 10:45 Paper No.  2014-FRI-S1004-O009
Tsu-Chi Chang Lasing Characteristics in a Single Crystalline ZnO Nano-membrane Fabricated by Focus Ion Beam
Tsu-Chi Chang,

We report the experimental observation of lasing action in a rectangular single crystalline ZnO nano-membrane fabricated by focus ion beam. The complicated lasing modes can be categorized as exciton lasing and photon lasing exhibited whispering-gallery mode (WGM) pattern and are controllable by changing the pumping position.

 Preview abstract
10:45 - 11:00 Paper No.  2014-FRI-S1004-O012
Chun-Lin Kuo Solar Water Splitting by Facile Synthesis of p-type Zn-doped α-Fe2O3 Films
Yu-Kuei Hsu,Chun-Lin Kuo,

Transparent Zn-doped -Fe2O3 films were prepared by a deposition-annealing (DA) process using nontoxic iron(III) chloride as the Fe precursor and zinc chloride as a acceptor dopant. In terms of the structural examination of as-grown samples, X-ray diffraction analysis demonstrated an increase in the lattice parameters of Zn incorporated in Fe2O3 by substituting Fe in the host lattice. No second phase was determined, indicating no phase separation in the ternary materials. Furthermore, impedance measurements show that the Zn-dopant increases the acceptor concentration. Significantly, the photoelectrochemical measurements exhibited remarkable cathodic current.

 Preview abstract

Thin Film Technology and Optical Engineering

Poster Session 3
Friday, Dec. 5, 2014  11:00-12:10
11:00 - 11:30 Paper No.  2014-Fri-P1002-P001
Yuan-Fu Hsu Award Candidate Characterization of Heterojunction Bipolar Phototransistor with Integrated Two-Section Light-Emitting Transistors
Yuan-Fu Hsu,Chao-Hsin Wu,

We demonstrated an integrated two-section phototransistor with a light-emitting transistor serving as the light source. The phototransistor optical gain can be modulated by incident optical powers and different bias conditions. With increasing incident optical power, HPTs absorb more photons and have higher internal gain than diodes.

 Preview abstract
11:00 - 11:30 Paper No.  2014-Fri-P1002-P002
Chia-Ming Tsai Award Candidate GaN MSM Ultra-violet Photodetectors Using Calcium Fluoride
Chia-Ming Tsai,Chin-Hsiang Chen,Shih-Kun Liu,

GaN metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors with the use of calcium fluoride (CaF2) as an insulating layer were fabricated and investigated. It was found that we can achieve a small dark current, and a large photocurrent to dark-current contrast ratio from the devices with CaF2 insulators. These results should be attributed to use of the CaF2 insulating layer, which can build a large barrier height between the metal and semiconductor.

 Preview abstract
11:00 - 11:30 Paper No.  2014-Fri-P1002-P003
Yi-Wen Wang Award Candidate Thin Film Transistor-Based Protein Sensors Combined with Microfluidic Channel
Yi-Wen Wang,Shou-Hao Wu,Chia-Chin Hung,Liang-Yu Su,Tsung-Lin Yang,Jian-Jang Huang,

We demonstrate a thin film transistor-based protein sensor combined with microfluidic channel. Diffusion time and induced charge are distinguishable by various channel lengths and concentrations of IgG antibody. According to our results and theoretical calculations, an unknown concentration of IgG antibody can be obtained.

 Preview abstract
11:00 - 11:30 Paper No.  2014-Fri-P1002-P004
Chun Shin Yeh Award Candidate Improved sensitivity of nitrogen gas sensor by field emission treatment
ChunShin Yeh,

Gas sensors for N2 detection were fabricated using carbon nanotubes (CNTs) before and after electron field emission treatment. CNTs showed an increase of sensitivity upon exposure to N2 due to CNTs provided more adsorption sites for N2 molecules after field emission treatment. The sensitivity of CNTs before and after the field emission treatment is approximately 0.12 and 0.18, respectively. Although the manipulation of field emission could increase the sensitivity, it causes permanent damages on the CNTs. In our experiment, the electrical response has been measured exposing the films to the interfering gases at different operating pressures between 50mTorr and 500Torr. Increasing detection sensitivity was observed with increasing chamber pressure. The growth process, test results, and the gas sensitivities will be discussed.

 Preview abstract
11:00 - 11:30 Paper No.  2014-Fri-P1002-P005
Heng Kuo Award Candidate Investigating Epitaxial Lift-off speed from 150-nm-thick Sacrificial AlAs on GaAs
Heng Kuo,David Jui-Yang Feng,

This study focuses on systematically investigating epitaxial lift-off (ELO) speed from etching a thin layer of 150-nm sacrificial AlAs on GaAs substrate under various pattern shapes – circle, square and hexagonal. The results show the average ELO speed will be enhanced from 30 (µm/min) to 65 (µm/min) as the pattern dimension increased as well as dependent on pattern shape.

 Preview abstract
11:00 - 11:30 Paper No.  2014-Fri-P1002-P006
Wei-Chieh Chen Award Candidate Study of power-dependence Raman spectroscopy of undoped InAs epitaxial layer
Tien-Hao Huang,Wei-Chieh Chen,Kuan-Chao Chen,Hao-Hsiung Lin,

We report on the excitation power dependent Raman scattering of undoped InAs. At a very low excitation power of 0.24 mW, the InAs shows a symmetric longitudinal optical (LO) mode with a linewidth of 3.4 cm-1, indicating its good crystallinity. However, as the power increases, an optically induced LO phonon plasmon coupled mode is observed. This LOPC mode is asymmetric and broad and hinders the measurement of the original LO mode.

 Preview abstract
11:00 - 11:30 Paper No.  2014-Fri-P1002-P007
Chen Ching Hua Award Candidate V/Al/Cr/Au Ohmic Contacts to N-type AlGaN
ChenChing Hua,LeeMing Lun,ChangChun Jung,YehYu Hsiang,

In this study,ohmic contacts were formed by e-beam evaporation of V(30 nm)/Al(200 nm)/Cr(30 nm)/Au(100 nm). These contacts were rapid thermal annealed in N2 for 30 s at various temperatures. The deposited V/Al/Cr/Au /n-AlGaN contacts at 900°C-alloyed exhibited a specific contact resistance (ρc) of approximately 3.59×10-4Ω-cm2.

 Preview abstract
Paper No.  2014-Fri-P1002-P008
Yu-hsiang Yeh Growth and Characterization of GaN grown on selective-area Ar and Si-implanted templates by MOVPE
Yu-hsiang Yeh,Jinn-Kong sheu,Ming-Lun Lee,Ching-Hua Chen,Zih-Yuan Liu,Chun Nan Liu,Po-Hsun Liao,Po-Cheng Chen,Wei-Chih Lai,

We employed ion implantation as self-assembled mask instead of dielectric materials such as SixNy or SiO2 for selective-area regrowth. This study was aimed to understand the mechanisms of selectively epitaxial growth by Metal-Organic Vapor-Phase Epitaxy(MOVPE) using Ar or Si implantation onto the surface layer of growth substrate.

 Preview abstract
Paper No.  2014-Fri-P1002-P009
Wei-Ting Lin Crystallization and Surface Morphology Properties of AlN Films Grown on Poly-AlN Substrate
Wei-Ting Lin,Kun-Yu Lai,Sung-Cheng Hu,Wan-Xuan Peng,Yung-Tien Lu,Sheng-Hui Chen,

The crystalline structure and surface morphology properties of AlN films were investigated on the polycrystalline AlN substrate. The (002) prefer orientation of AlN crystal can be controlled by sputtering parameter of Ar:N2 ratio at 14:6. And the surface roughness of the poly-AlN substrate was decreased from 58.3 nm to 12.5 nm.

 Preview abstract
Paper No.  2014-Fri-P1002-P010
Cheng-Ying Tsai Polarized Raman Spectroscopy of 3C-SiC Film Grown on 4H-SiC Substrate
Cheng-Ying Tsai,Bin Xin,Yu-Ming Zhang,Ren-Xu Jia,Zhe-Chuan Feng,Hao-Hsiung Lin,

Raman scattering of 3C-SiC films grown on n-type 4H-SiC substrate has been studied. Observations have been confirmed that 3C- and 4H-SiC obey the Raman selection rule of zincblende and wurtzite structures, respectively, and the LOPC mode is also recognized.

 Preview abstract
Paper No.  2014-Fri-P1002-P011
Chang-Jyun Li Practical study of curved D-type optical fiber sensor based on surface plasmon resonance
Chang-Jyun Li,

In this study, we discussed the sensitivity of curved D-type optical fiber sensors based on the thickness of deposited gold films. The surface plasmon resonance (SPR) phenomena were observed when covering the sensing region with liquids of different refractive indices.

 Preview abstract
Paper No.  2014-Fri-P1002-P012
Jian-Bo Zeng High Image Uniformity with Scanning Bad Pixel Replacement for Quantum Well Infrared Photodetectors
Ang-Hsun Tsai,Tzu-Chiang Chen,Shiang-Feng Tang,Jian-Bo Zeng,

We develop a scanning bad pixel replacement (BPR) algorithm with the weight analysis of neighboring pixels to improve the cluster defective pixels and enhance the image uniformity for the Quantum Well Infrared Photodetector (QWIP). Simulation results show that our proposed algorithm can significantly improve the uniformity performance of infrared images.

 Preview abstract
Paper No.  2014-Fri-P1002-P013
Zhe Chuan Feng Investigation of Optical functions of AlGaN Thin Films Grown on Sapphire with high Al content
Deng Xie,Zhen Zhang,ZhiRen Qiu,Ting Mei,DevkiN Talwar,HuiRong Su,Yi Liu,Ian Ferguson,ZheChuan Feng,

A set of AlGaN films with Al content up to 62% were grown on sapphire with a low temperature AlN of several nanometers as nucleation layer. Combined variable-angle spectroscopic ellipsometer (VASE) and optical transmission (OT) data, precise optical function could be modeled.

 Preview abstract
Paper No.  2014-Fri-P1002-P014
WEI HUA HSIAO A ZnO-based Double Heterojunction Structure Prepared Using Radio-Frequency Magnetron Cosputtering System

A ZnO-based double heterojunction structure was prepared using rf magnetron cosputtering system. A significant enhancement on the near band edge radiation with the deep level emission disappearance was measured due to the cosputtered AlN-ZnO film was both beneficial to confine theㄩelectron-hole pairs and suppress the native defects formation in i-ZnO film surface.

 Preview abstract
Paper No.  2014-Fri-P1002-P015
Chen-Hui Weng The enhanced optoelectronic characteristic on AZO layer by roughing ZnO seed layer to lead Cu nanowire formation
Chen-Hui Weng,Wei-Che Huang,Yen-Sheng Lin,

In this study, the RF magnetron sputtering was used to deposit 40 nm ZnO as seed layer and insert the metal nano-Cu as the middle layer, finally the another 40nm AZO was deposed as capping layer on the glass substrate, respectively. Due to the roughened seed layer surface, which will lead the formation of nano-Cu structures and then the optoelectronic property of AZO/nano-Cu/ZnO layer had been enhanced. The results shown that the thin film has the surface of ZnO seed layer etched by 0.1wt% KOH at 150 seconds, the lower resistance of 1.3×10-4 Ω-cm was measured, and the average transmittance in visible range from 360-780 nm is about 85.5%, the best figure of merit of the ZnO(40nm)/nano-Cu(5nm)/AZO(40nm) thin film is 1.3×10-2 Ω-1.

 Preview abstract
Paper No.  2014-Fri-P1002-P016
Chung-En Chang Epitaxial Growth of Two-Dimensional Crystal Hetero-Structures
Chung-En Chang,Meng-Yu Lin,

Uniform MoS2/graphene hetero-structures are epitaxially grown by using CVD. The film structure is examined by HRTEM. Photo-excited electron induced Fermi level shift of the graphene transistor is observed by using the hetero-structure as the channel. After rapid epitaxial process, double hetero-structures of graphene/MoS2/graphene are achieved.

 Preview abstract
Paper No.  2014-Fri-P1002-P017
Tsung-Hao Su Pentacene Field-Effect Transistors through In-Situ Electrical Characterization: Resolving the Effects of Thin-Film Growing
Tsung-Hao Su,Ya-Ze Li,Kuan-Ting Chen,Yu-Hsuan Liu,Po-Chien Chang,Tzu-Hung Yeh,Yi-Nan Lin,Shun-Wei Liu,

The authors reported the dependence of deposition rate in pentacene organic thin film transistors. We have obtained a specific deposition rate (0.3 Å/s) which would improve the pentacene thin-film growing property. The electronic characteristics were measured by a powerful in-situ real-time measurement system.

 Preview abstract
Paper No.  2014-Fri-P1002-P018
Pin-Rong Lin Resistive switching behavior inselenium arsenide thin film grown bythe pulsed laser depositionfor resistance switching random access memory
Pin-Rong Lin,

Depositing selenium arsenide thin films by the pulsed laser deposition at the room temperature, and afterwards deposit gold on selenium arsenide thin films, it will form resistive random access memory (RRAM).

 Preview abstract
Paper No.  2014-Fri-P1002-P019
Jhih-Yuan Lin Fabrication of ZnO Nanorod Arrays by Lift-off Technique on Sapphire Substrates
Fang-Hsing Wang,Ching-Shan Wang,Jhih-Yuan Lin,

This study uses the hydrothermal method to fabricate ZnO nanorods (ZnRs) array on patterned ZnO seed layers prepared by lift-off technique. The structural and optical properties of the sol-gel ZnO seed layer and the flower-like ZnRs were explored with different thicknesses of the aluminum sacrificial layer and growth time of ZnRs.

 Preview abstract
Paper No.  2014-Fri-P1002-P020
Peng-Yin Su Noise Properties of Metal-Organic-Metal Ultraviolet Photodetectors
Peng-Yin Su,Ricky-Wenkuei Chuang,Chin-Hsiang Chen,

The metal-organic-metal (MOM) ultraviolet (UV) sensors with the m-MTDATA organic layer were successfully fabricated and their low-frequency noise characteristics were also analyzed. It was found that the UV-to-visible rejection ratio of the fabricated sensor was about 28.1 when biased at 5 V with a cutoff at 220 nm. With an incident light wavelength of 220 nm and an applied bias of 5 V, it was found that measured responsivity of the sensor was 2.09x10-4 A/W. Furthermore, a lower noise level and a larger detectivity can be obtained by using m-MTDATA based UV sensors.

 Preview abstract
Paper No.  2014-Fri-P1002-P021
Hao-Zhe Sun Synthesis and characterization of ZnO/ZnMgO multiple quantum wells by molecular beam epitaxy
Hao-Zhe Sun,Hsiang-Chen Wang,

The growth of single and multiple (three) ZnO/ZnMgO quantum well samples on sapphire substrates, through a two-step temperature variation growth of ZnO buffer layers by molecular beam epitaxy (MBE), were investigated. For single quantum well (QW) growth, the thicker first ZnMgO barrier layer about 220 nm on the high-temperature growth ZnO (HT-ZnO) buffer layer, accumulated larger compressive stress, to achieve higher quality ZnO/ZnMgO QW growth. In the temperature-dependent photoluminescence (PL) results, the obvious S-shape variation of emission peak positions presented the stronger exciton confinement ability of QW in the higher magnesium concentrations of ZnMgO barrier layer growth. Compared to the control sample, the quantum confinement resulted in blueshift PL peaks of QW samples at low temperature. The multiple quantum well (MQWs) structure increased the exciton confinement ability to enhance the light emission efficiency of the sample. The three ZnO/ZnMgO MQWs structures were found clearly by high-resolution transmission electron microscopy.

 Preview abstract
Paper No.  2014-Fri-P1002-P022
Yi Jing Li Homojunction Cu2O Thin Film for Solar Water Splitting
YuKuei Hsu,YiJing Li,

Electrodeposited cuprous oxide p-n homojunction thin films were successfully fabricated for photoelectron-chemical hydrogen generation. The photocurrent response of onset potential was positively shifted and three-time enhancement of photocurrent was significantly achieved by covering n-type layer on p-Cu2O film owing to the photovoltaic effect of p-n structure.

 Preview abstract
Paper No.  2014-Fri-P1002-P023
Shih-Chang Tong Characterization of CdMnTe epilayers on Si(111) substrates grown by molecular beam epitaxy
Shih-Chang Tong,Yu-Hsuan Tsai,Wei-jiun Tsai,Jyh-Shyang Wang,

We investigated CdMnTe epilayers on Si(111) substrates grown by molecular beam epitaxy. Compared to CdTe epilayers, CdMnTe epilayers have better surface smoothness, crystal quality, and photoluminescence properties. Full width at half maximum of 165" in X-ray rocking curve was achieved in Cd0.63Mn0.37Te epilayer with a thickness of only 500 nm.

 Preview abstract
Paper No.  2014-Fri-P1002-P024
Bo Yuan Hong Single–Shot Laser Treatment Provides Nanocrystallized CdS for Detection of UV Light with Picowatt Sensitivity
Bo Yuan Hong,Keng-Te Lin,Hsuen-Li Chen,Yu-Sheng Lai,Yu–Lun Liu,Yi-Chuan Tseng,Cheng-Hsi Lin,

In this study we have demonstrated that the improvements of detection capability of CdS photoconductors in UV regime are much larger than that in visible regime. We for the first time determined that a nanocrystallized cadmium sulfide (CdS) photoconductor can behave as a picowatt–sensitive detector in the ultraviolet (UV) regime after ultra–shallow–region crystallization of the CdS film upon a single shot from a KrF laser.

 Preview abstract
Paper No.  2014-Fri-P1002-P025
Tzu-Hsien Lan Confocal laser scanning system with varifocal lens
Tzu-Hsien Lan,Chun-Jen Weng,Pi-Ying Cheng,Da-Ren Liu,

In this paper, we use a liquid lens in a confocal laser scanning system (CLSM) for 3-D scanning. The focal length of the laser in this system can be easily changed by electrical driving the liquid lens. Thus, we can measure the distance between the sensor head and sample by detecting the reflective power according to the theory of CLSM.

 Preview abstract
Paper No.  2014-Fri-P1002-P026
Chien-Hoa Tseng Glancing angle deposited Ag structured thin fim using substrate cooling method
Chien-Hoa Tseng,Yi-Jun Jen,

The substrate cooling technique is introduced in glancing angle deposition to sculpture Ag nanorod array(NRA). A slanted Ag NRA deposited under substrate cooling shows different optical properties compared with the other Ag NRA without cooling. A zig-zag Ag NRA is then fabricated to show near horizontal lying rods on the surface top. The associated obvious polarization dependent transmittance and reflectance spectra are then measured in this work.

 Preview abstract
Paper No.  2014-Fri-P1002-P027
Hsin-Ta Lee Effect of acid and dispersant on separation of the Semi- and Metal- SWNTs by Electrophoresis Method
Hsin-Ta Lee,Hsi-Chao Chen,Chih-Feng Yen,Guan-Jhen Chen,Tzu-Ti Hsiao,Wan-Ting Yang,

The proposal of this research was to separate the metallic and semiconducting SWNTs by agarose gel electrophoresis. There were two dispersants and two SWNTs: Triton X-100 & SDS and SWNTs with and without acid, respectively. The optimum separation of semi- and metal- SWNTs was used Triton X-100 with acid SWNTs.

 Preview abstract
Paper No.  2014-Fri-P1002-P028
Chia Cheng Lin Study of the 2D activity of the Glucose Oxidase Enzyme with full-field heterodyne interferometer
Hsiang Chang,Chia Cheng Lin,Cheng Chih Hsu,

In this study, we demonstrated a full-field heterodyne interferometer to determine the phase variation of the glucose oxidase (GOx) enzyme with various reaction activity. According to the measurement results, the phase variation was inversely proportional to the applications of GOx.

 Preview abstract
Paper No.  2014-Fri-P1002-P029
Yi-Wei Zhang Low voltage focus tunable device based on ionic polymer metal composite
Yi-Wei Zhang,

IPMC (Ionic Polymer Metallic Composite) is used as a deformable mirror for focus tuning. In this paper we changed the electrode of the IPMC from platinum to silver. With the lower Young’s modulus and lower surface resistivity of silver, we can decrease the driving voltage from 3V to almost 2V. The shortest focal length is 6.5 mm.

 Preview abstract
Paper No.  2014-Fri-P1002-P030
Hsuan An Chen Electrically switchable beam steering based on a liquid crystal film with a photopolymer layer
HsuanAn Chen,ShugJune Hwang,

A simple and low-cost technique is proposed to construct a tunable liquid crystal beam steering with polymer wedge structure by micro-drop technology and polymerization. The geometric profile of the polymer wedge depends on the microdroplet volume and UV irradiation dose. The deflection angle can be electrically tuned from 0°to 5°.

 Preview abstract
Paper No.  2014-Fri-P1002-P031
Li-Jie Chen Influence of thermal annealing on the optical properties and residual stress of Nb2O5-SiO2 composite films by fast-alternative bipolar-pulsed reactive magnetron sputtering
Chien-Jen Tang,Li-Jie Chen,Zong-Ting Hua,Wei-Chiang Sun,Guan-Syun Huang,Cheng-Chung Jaing,

Nb2O5-SiO2 composite films were prepared by fast-alternative bipolar-pulsed magnetron sputtering using niobium oxide and silicon targets. The influence of thermal annealing on optical properties and stress behaviors of composite films were investigated by spectroscopic ellipsometer and phase-shift Twyman-Green interferometer.

 Preview abstract
Paper No.  2014-Fri-P1002-P032
Tsung-Yo Tsai Improved Method for Measuring Residual Stress in Thin Films by Substrate Contour Subtraction
Chuen-Lin Tien,Kuo-Chang Yu,Tsung-Yo Tsai,

An improved approach for measuring the residual stress in thin films by substrate contour subtraction is presented. We proposed a Twyman-Green interferometer combined with fast Fourier transform (FFT) and contour subtraction method to measure the residual stress of thin films. The results show that the deviation of measuring values is significantly reduced in residual stress measurement of thin films.

 Preview abstract
Paper No.  2014-Fri-P1002-P033
Guan-Syun Huang Effect of thermal annealing on the optical and surface properties of niobium oxide films deposited by high power pulsed reactive magnetron sputtering
Chien-Jen Tang,Guan-Syun Huang,Wei-Chiang Sun,Hong-Bin Chang,Li-Jie Chen,Cheng-Chung Jaing,

The Niobium Oxide thin films were deposited by DC- ,and high power pulsed reactive magnetron sputtering. The influence of thermal annealing on refraction indices, extinction coefficients and surface roughness of NbOx films were analyzed via spectroscopy and atomic force microscope.

 Preview abstract
Paper No.  2014-Fri-P1002-P034
Cheng-Siang Hu Process Development of Anti-Reflection Coatings for Crystalline-Si Solar Cells
Jian-Yang Lin,Cheng-Siang Hu,

The purpose of this work is to study the anti-reflection coating structure with spherical SiO2 micro particles for the single-crystalline silicon solar cell applications. With the spherical SiO2 micro particles, the surface reflectivity of the single-crystalline silicon substrate can be reduced to an average value of 5.8% in the 400 – 700 nm wavelength range.

 Preview abstract

Thin Film Technology and Optical Engineering

Oral session 5 - Plasmonics
Friday, Dec. 5, 2014  11:10-12:10
Chair: Jian-Yang Lin,Tsung-Shine Ko
Room: B21
11:10 - 11:25 Paper No.  2014-FRI-S1005-O001
Tai-Chi Yang Award Candidate Controllable Localized Surface Plasmon Resonance Phenomena in Reduced Gold Oxide Films
Tai-Chi Yang,Yu-Lun Liu,Cheng-Yi Fang,Chen-Chieh Yu,Hsuen-Li Chen,

We used reactive sputtering to prepare gold oxide (AuOx) films, which we then subjected to reduction processes under ambient conditions to obtain reduced AuOx films featuring embedded Au nanoparticles (NPs). We observed localized surface plasmon resonance (LSPR) phenomena from the visible to the near-infrared during the reduction process.

 Preview abstract
11:25 - 11:40 Paper No.  2014-FRI-S1005-O004
Yu-Chia Cheng Award Candidate Highly Reflective Liquid Mirrors: Exploring the Effects of Localized Surface Plasmon Resonance and the Arrangement of Nanoparticles on Metal Liquid-like Films
Yu-Chia Cheng,Yu-Ting Yen,Tai-Yen Lu,Yang-Chun Lee,Chen-Chieh Yu,Yin-Chih Tsai,Yi-Chuan Tseng,Hsuen-Li Chen,

A high-reflectance liquid mirror is prepared from densely packed silver nanoparticles (Ag NPs) of two different sizes. Varying the temperature and ligand concentration achieved liquid mirrors exhibiting high specular reflectance. The average reflectance in the range from 400 to 1000 nm could reach 77%.

 Preview abstract
11:40 - 11:55 Paper No.  2014-FRI-S1005-O005
You-Cheng Jhang Award Candidate Three Dimensional Surface Plasmon Resonance Device for the Application of Optoelectronic Transformation
You-Cheng Jhang,Cheng-Hsuan Lin,Chien-Cheng Kuo,Cheng-Chung Lee,Sheng-Hui Chen,

In this study, the three-dimensional (3D) metal-insulator-metal (MIM) device was fabricated by using the auto-cloning technique on a anodic aluminum oxide (AAO) template. The 3D structure can provide various k-vector to improve the plasmonic coupling effect and increase the optoelectronic transformation. The power conversion efficiency (PCE) of 3D MIM device was about 1.41x10-3 %.

 Preview abstract
11:55 - 12:10 Paper No.  2014-FRI-S1005-O008
Jyong-Wei Huang Nanosculptured silver-jointed silicon dioxide otagon nano-helix array
Jyong-Wei Huang,Yi-Jun Jen,

In this work, glancing angle deposition is used to form a helix array as a three-dimensional nanostructured thin film. This structured film is a silver-SiO2 composite that exhibits an effective index of near unity with a small imaginary part, which absorbs light in a broad band and over a wide range of angles.

 Preview abstract